Semiconductor device

ABSTRACT

According to one embodiment, a semiconductor device includes a first semiconductor region, a first electrode, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, and a second electrode. The first electrode forms a Schottky junction with the first region. The second region is provided between the first region and the first electrode. The third region is provided between the first region and the first electrode and forms an ohmic junction with the first electrode. The fourth region is provided between the first region and the third region. The fourth region has a higher impurity concentration than the first region. The fifth region is provided between the third region and the first electrode. The fifth region has a higher impurity concentration than the third region. The second electrode is provided on opposite side of the first region from the first electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 14/201,711,filed Mar. 7, 2015 which is based upon and claims the benefit ofpriority from Japanese Patent Application No. 2013-138244, filed on Jul.1, 2013; the entire contents of each are incorporated herein byreference.

FIELD

Embodiments described herein relate generally to a semiconductor device.

BACKGROUND

As a device having rectification functionality, a JBS (junction barrierSchottky) diode including both a Schottky barrier junction and a p-njunction is known. The JBS diode includes a plurality of p-typesemiconductor regions formed in an n-type semiconductor region, and aSchottky barrier metal in contact with the n-type semiconductor regionand the p-type semiconductor region. The JBS diode has a structure forreducing leakage by relaxing the electric field at the interface betweenthe n-type semiconductor region and the Schottky electrode under reversebias. In semiconductor devices, it is important to further improve thewithstand capability for surge voltage and the like.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view illustrating the configuration of asemiconductor device according to a first embodiment;

FIG. 2 is a schematic plan view illustrating the configuration of thesemiconductor device according to the first embodiment;

FIG. 3 illustrates an impurity concentration distribution;

FIG. 4 illustrates an electric intensity distribution;

FIGS. 5A to 6C are schematic sectional views illustrating the method formanufacturing the semiconductor device;

FIG. 7 is a schematic sectional view illustrating the configuration of asemiconductor device according to the second embodiment; and

FIGS. 8A to 10 are schematic plan views illustrating the configurationof semiconductor devices according to the third embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor device includesa first semiconductor region, a first electrode, a second semiconductorregion, a third semiconductor region, a fourth semiconductor region, afifth semiconductor region, and a second electrode. The firstsemiconductor region has a first conductivity type. The first electrodeforms a Schottky junction with the first semiconductor region. Thesecond semiconductor region of a second conductivity type is providedbetween the first semiconductor region and the first electrode. Thethird semiconductor region of the second conductivity type is providedbetween the first semiconductor region and the first electrode. Thethird semiconductor region forms an ohmic junction with the firstelectrode. The fourth semiconductor region of the first conductivitytype is provided between the first semiconductor region and the thirdsemiconductor region. The fourth semiconductor region has a higherimpurity concentration than the first semiconductor region. The fifthsemiconductor region of the second conductivity type is provided betweenthe third semiconductor region and the first electrode. The fifthsemiconductor region has a higher impurity concentration than the thirdsemiconductor region. The second electrode is provided on opposite sideof the first semiconductor region from the first electrode. Variousembodiments will be described hereinafter with reference to theaccompanying drawings.

In the following description, like members are labeled with likereference numerals, and the description of the members once described isomitted appropriately. In the following description, the notations ofn⁺, n, n⁻ and p⁺, p, p⁻ represent relative magnitude of impurityconcentration in each conductivity type. That is, the symbol with moreplus signs represents relatively higher impurity concentration, and thesymbol with more minus signs represents relatively lower impurityconcentration. Furthermore, in the following description, by way ofexample, the first conductivity type is n-type, and the secondconductivity type is p-type.

First Embodiment

FIG. 1 is a schematic sectional view illustrating the configuration of asemiconductor device according to a first embodiment.

FIG. 2 is a schematic plan view illustrating the configuration of thesemiconductor device according to the first embodiment.

FIG. 1 shows a schematic sectional view taken along line A-A shown inFIG. 2.

As shown in FIG. 1, the semiconductor device 110 according to thisembodiment includes an n⁻-type semiconductor region (first semiconductorregion) 11, an anode electrode (first electrode) 81, a first p-typesemiconductor region (second semiconductor region) 20, a second p-typesemiconductor region (third semiconductor region) 30, an n⁻-typesemiconductor region (fourth semiconductor region) 40, a p⁺-typesemiconductor region (fifth semiconductor region) 50, and a cathodeelectrode (second electrode) 82. The semiconductor device 110 includes aJBS diode and a P-N diode.

The n⁻-type semiconductor region 11 is provided on e.g. an n⁺-typesubstrate 10. The substrate 10 is e.g. a silicon carbide (SiC)substrate. For instance, the substrate 10 includes hexagonal SiC (e.g.,4H-SiC). The substrate 10 is e.g. a SiC bulk substrate fabricated bysublimation technique. The substrate 10 is doped with an n-type impurity(e.g., nitrogen (N)). The impurity concentration of the substrate 10 ise.g. approximately 1×10¹⁸ cm⁻³ or more and 5×10¹⁸ cm⁻³ or less.

The n⁻-type semiconductor region 11 is a region formed by e.g. epitaxialgrowth on the first surface 10 a of the substrate 10. The n⁻-typesemiconductor region 11 includes e.g. SiC. The n⁻-type semiconductorregion 11 contains an n-type impurity (e.g., N). The impurityconcentration of the n⁻-type semiconductor region 11 is e.g.approximately 5×10¹⁴ cm⁻³ or more and 5×10¹⁶ cm⁻³ or less. The impurityconcentration of the n⁻-type semiconductor region 11 is lower than theimpurity concentration of the substrate 10. In this embodiment, theimpurity concentration of the n⁻-type semiconductor region 11 isapproximately 1×10¹⁵ cm⁻³ or more and 2×10¹⁶ cm⁻³ or less.

The thickness of the n⁻-type semiconductor region 11 is determined bythe design of the breakdown voltage characteristics and othercharacteristics of the semiconductor device 110. For instance, in thecase of a breakdown voltage of 600 volts (V), the thickness of then⁻-type semiconductor region 11 is 3.5 micrometers (μm) or more andapproximately 7 μm or less.

The anode electrode 81 is caused to form a Schottky junction with then⁻-type semiconductor region 11. The anode electrode 81 is provided onthe opposite side of the n⁻-type semiconductor region 11 from thesubstrate 10. In this embodiment, the direction connecting the n⁻-typesemiconductor region 11 and the anode electrode 81 is referred to asZ-direction. One of the directions orthogonal to the Z-direction isreferred to as X-direction. The direction orthogonal to the Z-directionand the X-direction is referred to as Y-direction. Furthermore, theorientation from the n⁻-type semiconductor region 11 toward the anodeelectrode 81 along the Z-direction is referred to as upward (upperside), and the opposite is referred to as downward (lower side).

The anode electrode 81 is provided on the n⁻-type semiconductor region11. The Schottky junction between the anode electrode 81 and the n⁻-typesemiconductor region 11 constitutes a Schottky barrier diode (SBD). Theanode electrode 81 is made of e.g. titanium (Ti).

The first p-type semiconductor region 20 is provided between the n⁻-typesemiconductor region 11 and the anode electrode 81. The first p-typesemiconductor region 20 is in contact with the anode electrode 81. Thefirst p-type semiconductor region 20 includes e.g. SiC.

The first p-type semiconductor region 20 contains a p-type impurity(e.g., aluminum (Al) or boron (B)). The impurity concentration of thefirst p-type semiconductor region 20 is e.g. approximately 5×10¹⁷ cm⁻³or more and 1×10¹⁹ cm⁻³ or less. In this embodiment, the impurityconcentration of the first p-type semiconductor region 20 isapproximately 1×10¹⁸ cm⁻³. The thickness (thickness in the Z-direction)of the first p-type semiconductor region 20 is e.g. approximately 0.3 μmor more and 1.2 μm or less. At the boundary between the first p-typesemiconductor region 20 and the n⁻-type semiconductor region 11, a p-njunction is constituted.

As shown in FIG. 2, the first p-type semiconductor region 20 is providede.g. so as to extend in one direction. In this embodiment, the firstp-type semiconductor region 20 extends in the Y-direction. The firstp-type semiconductor region 20 may be provided in a plurality. Theplurality of first p-type semiconductor regions 20 may be provided inparallel at a prescribed spacing. Each of the plurality of first p-typesemiconductor regions 20 may be provided in an island shape.

The second p-type semiconductor region 30 is provided between then⁻-type semiconductor region 11 and the anode electrode 81. The secondp-type semiconductor region 30 is caused to form an ohmic junction withthe anode electrode 81. The second p-type semiconductor region 30includes e.g. SiC.

The second p-type semiconductor region 30 contains a p-type impurity(e.g., Al or B). The impurity concentration of the second p-typesemiconductor region 30 is e.g. approximately 5×10¹⁷ cm⁻³ or more and1×10¹⁹ cm⁻³ or less. The impurity concentration of the second p-typesemiconductor region 30 may be substantially equal to the impurityconcentration of the first p-type semiconductor region 20. In thisembodiment, “substantially equal” means the case of being equal and thecase of including a manufacturing error.

The thickness (thickness in the Z-direction) of the second p-typesemiconductor region 30 is e.g. approximately 0.3 μm or more and 1.2 μmor less. The thickness of the second p-type semiconductor region 30 maybe substantially equal to the thickness of the first p-typesemiconductor region 20.

The second p-type semiconductor region 30, the n⁻-type semiconductorregion 11, and the substrate 10 constitute a P-N diode. As shown in FIG.2, the second p-type semiconductor region 30 may be provided so as tosurround the plurality of first p-type semiconductor regions 20 in theX-Y plane. Further, as will be described with reference to FIGS. 8Athrough 10, the second p-type semiconductor region 30 may be providedadjacent to the plurality of first p-type semiconductor regions 20 inthe X-Y plane.

The n⁻-type semiconductor region 40 is provided between the n⁻-typesemiconductor region 11 and the second p-type semiconductor region 30.The n⁻-type semiconductor region 40 is in contact with the second p-typesemiconductor region 30. The n⁻-type semiconductor region 40 includese.g. SiC.

The n⁻-type semiconductor region 40 contains an n-type impurity (e.g.,N). The impurity concentration of the n⁻-type semiconductor region 40 ise.g. approximately 1×10¹⁷ cm⁻³ or more and 1×10¹⁸ cm⁻³ or less. Theimpurity concentration of the n⁻-type semiconductor region 40 is higherthan the impurity concentration of the n⁻-type semiconductor region 11.In this embodiment, the impurity concentration of the n⁻-typesemiconductor region 40 is approximately 2×10¹⁷ cm⁻³.

The p⁺-type semiconductor region 50 is provided between the secondp-type semiconductor region 30 and the anode electrode 81. The p⁺-typesemiconductor region 50 is in contact with the anode electrode 81. Thep⁺-type semiconductor region 50 includes e.g. SiC.

The p⁺-type semiconductor region 50 contains a p-type impurity (e.g., Alor B). The impurity concentration of the p⁺-type semiconductor region 50is e.g. approximately 2×10¹⁹ cm⁻³ or more and 5×10²° cm⁻³ or less. Theimpurity concentration of the p⁺-type semiconductor region 50 is higherthan the impurity concentration of the second p-type semiconductorregion 30. The p⁺-type semiconductor region 50 is provided to ensure theohmic junction between the second p-type semiconductor region 30 and theanode electrode 81. In this embodiment, the impurity concentration ofthe p⁺-type semiconductor region 50 is approximately 1×10²° cm⁻³.

Preferably, the p⁺-type semiconductor region 50 is provided inside (inthe interior of) the second p-type semiconductor region 30. That is,preferably, the p⁺-type semiconductor region 50 is surrounded with thesecond p-type semiconductor region 30, i.e., not in contact with then⁻-type semiconductor region 11. This suppresses leakage current.

The width W1 in the X-direction of the p⁺-type semiconductor region 50is e.g. approximately 20 μm or more and 100 μm or less. Preferably, thewidth W1 is e.g. four times or more the thickness of the n⁻-typesemiconductor region 11. If the width W1 is narrow, the P-N diode is noteasily turned to the on-state. Furthermore, the current concentration ismade larger in the on-state and at the time of breakdown. If the widthW1 is wide, the area of the JBS diode is made relatively small. In thisembodiment, the width W1 is e.g. approximately 40 μm or more and 50 μmor less.

The width W2 in the X-direction from the inner end of the p⁺-typesemiconductor region 50 to the inner end of the second p-typesemiconductor region 30 is e.g. approximately 2 μm or more and 10 μm orless. The width W2 is e.g. approximately 1/20 or more and ⅕ or less ofthe width W1. In this embodiment, the width W2 is e.g. approximately 5μm. The width W3 in the X-direction from the outer end of the p⁺-typesemiconductor region 50 to the outer end of the second p-typesemiconductor region 30 is e.g. approximately 5 μm or more and 20 μm orless. The width W3 is e.g. approximately 1/10 or more and ½ or less ofthe width W1. In this embodiment, the width W3 is e.g. approximately 20μm.

Between the p⁺-type semiconductor region 50 and the anode electrode 81,an ohmic electrode 81 a for ensuring ohmic junction may be provided. Theohmic electrode 81 a is made of e.g. nickel (Ni).

The cathode electrode 82 is provided on the opposite side of the n⁻-typesemiconductor region 11 from the anode electrode 81. In this embodiment,the cathode electrode 82 is in contact with the second surface 10 b ofthe substrate 10. The second surface 10 b is a surface on the oppositeside of the substrate 10 from the first surface 10 a. The cathodeelectrode 82 is caused to form an ohmic junction with the substrate 10.The cathode electrode 82 is made of e.g. Ni.

The semiconductor device 110 may further include a p⁻-type semiconductorregion (sixth semiconductor region) 60. The p⁻-type semiconductor region60 is provided so as to surround the end 30 e of the second p-typesemiconductor region 30. The p⁻-type semiconductor region 60 contains ap-type impurity (e.g., Al or B). The impurity concentration of thep⁻-type semiconductor region 60 is e.g. approximately 1×10¹⁷ cm⁻³ ormore and 1×10¹⁸ cm⁻³ or less. The impurity concentration of the p⁻-typesemiconductor region 60 is lower than the impurity concentration of thesecond p-type semiconductor region 30. The p⁻-type semiconductor region60 is a termination region of the semiconductor device 110. In thisembodiment, the impurity concentration of the p⁻-type semiconductorregion 60 is approximately 5×10¹⁷ cm⁻³.

In the semiconductor device 110, as viewed in the Z-direction, the outerperipheral edge 81 e of the anode electrode 81 is provided between theend 50 e of the p⁺-type semiconductor region 50 and the end 30 e of thesecond p-type semiconductor region 30. That is, as viewed in theZ-direction, the second p-type semiconductor region 30 is provided fromthe inside to the outside of the anode electrode 81.

The semiconductor device 110 as described above includes a JBS diodecomposed of the anode electrode 81, the cathode electrode 82, then⁻-type semiconductor region 11, and the first p-type semiconductorregion 20, and a P-N diode composed of the anode electrode 81, thecathode electrode 82, the n⁻-type semiconductor region 11, and thesecond p-type semiconductor region 30. The P-N diode is parallelconnected with the JBS diode.

Next, the operation of the semiconductor device 110 is described.

A (forward) voltage is applied so that the anode electrode 81 ispositive relative to the cathode electrode 82 of the semiconductordevice 110. Then, electrons having left the anode electrode 81 andcrossed the Schottky barrier flow through the n⁻-type semiconductorregion 11 and the substrate 10 to the cathode electrode 82. Furthermore,over a prescribed voltage (e.g., 3 V), electrons and holes exceeding thebuilt-in potential flow through the p-n junction surface existing at theinterface between the second p-type semiconductor region 30 and then⁻-type semiconductor region 11.

On the other hand, a (reverse) voltage is applied so that the anodeelectrode 81 is negative relative to the cathode electrode 82. Then,electrons cannot easily cross the Schottky barrier between the anodeelectrode 81 and the n⁻-type semiconductor region 11. This suppressesthe flow of electrons. Furthermore, a depletion layer extends primarilyon the n⁻-type semiconductor region 11 side of the p-n junction surface.Thus, the current does not substantially flow in the semiconductordevice 110. Furthermore, when the reverse voltage is applied, the firstp-type semiconductor region 20 relaxes the electric field at theinterface between the anode electrode 81 and the n⁻-type semiconductorregion 11. This improves the breakdown voltage.

The semiconductor device 110 achieves compatibility between lowon-voltage based on the SBD and low on-resistance based on the P-Ndiode.

Here, a surge voltage may be applied to the semiconductor device 110 sothat the anode electrode 81 is negative. Then, if the n⁻-typesemiconductor region 40 is not provided, the electric field is likely toconcentrate at the end 30 e of the second p-type semiconductor region30. However, in the semiconductor device 110, the n⁻-type semiconductorregion 40 is provided below the second p-type semiconductor region 30.Thus, the breakdown voltage in the p-n junction portion (boundaryportion between the second p-type semiconductor region 30 and then⁻-type semiconductor region 11) is lower than in the case where then⁻-type semiconductor region 40 is not provided. As a result, when asurge voltage is applied, breakdown occurs more easily at the positionof the n⁻-type semiconductor region 40. In the semiconductor device 110,concentration of breakdown in the termination region is suppressed. Thisprevents device destruction in the termination region.

Preferably, the breakdown voltage in the n⁻-type semiconductor region 40is made lower than the breakdown voltage in the termination region.Then, breakdown occurs in the portion of the n⁻-type semiconductorregion 40 earlier than in the termination region. As a result, in thesemiconductor device 110, device destruction in the termination regiondue to breakdown is prevented.

FIG. 3 illustrates an impurity concentration distribution.

In FIG. 3, the horizontal axis represents depth, and the vertical axisrepresents the concentration of impurity. The horizontal axis representsthe depth on line b-b shown in FIG. 1, where the boundary between thep⁺-type semiconductor region 50 and the anode electrode 81 is set to“0”. FIG. 3 shows the concentration distribution C1 of n-type impurity(N) and the concentration distribution C2 of p-type impurity (Al).

As shown in the concentration distribution C2 of p-type impurity, theconcentration of p-type impurity gradually decreases in the depthdirection from the boundary between the p⁺-type semiconductor region 50and the anode electrode 81. For convenience of description, in FIG. 1,the boundary between the p⁺-type semiconductor region 50 and the secondp-type semiconductor region 30 is clearly shown. However, the actualconcentration of impurity gradually decreases as in the concentrationdistribution C2 of p-type impurity shown in FIG. 3.

As shown in the concentration distribution C1 of n-type impurity, theconcentration of n-type impurity is high at the position of the n⁻-typesemiconductor region 40. The peak position of the concentrationdistribution C1 is located below the second p-type semiconductor region30 (on the second p-type semiconductor region 30 side of the n⁻-typesemiconductor region 11).

FIG. 4 illustrates an electric intensity distribution.

In FIG. 4, the horizontal axis represents depth, and the vertical axisrepresents electric intensity. The horizontal axis represents the depthon line b-b shown in FIG. 1, where the boundary between the p⁺-typesemiconductor region 50 and the anode electrode 81 is set to “0”. FIG. 4shows the electric intensity distribution E1 in the case of includingthe n⁻-type semiconductor region 40, and the electric intensitydistribution E2 in the case of not including the n⁻-type semiconductorregion 40.

As shown in the electric intensity distribution E2, the electricintensity in the case of not including the n⁻-type semiconductor region40 reaches its peak near the boundary between the second p-typesemiconductor region 30 and the n⁻-type semiconductor region 11, andthen gradually decreases in the depth direction.

As shown in the electric intensity distribution E1, the electricintensity in the case of including the n⁻-type semiconductor region 40reaches its peak near the boundary between the second p-typesemiconductor region 30 and the n⁻-type semiconductor region 11, andthen sharply decreases at the position of the n⁻-type semiconductorregion 40. Furthermore, the electric intensity of the electric intensitydistribution E1 gradually decreases in the depth direction from theposition of the n⁻-type semiconductor region 40.

That is, as seen from FIG. 4, in the electric intensity distribution E1in the case of including the n⁻-type semiconductor region 40, theelectric intensity is lower at the position of the n⁻-type semiconductorregion 40 than in the electric intensity distribution E2 in the case ofnot including the n⁻-type semiconductor region 40.

Here, the integral of each of the electric intensity distributions E1and E2 gives breakdown voltage. Thus, by including the n⁻-typesemiconductor region 40, the breakdown voltage is made lower than in thecase of not including the n⁻-type semiconductor region 40. In thesemiconductor device 110, by providing the n⁻-type semiconductor region40, breakdown is made more likely to occur. This suppresses breakdownconcentrated in the termination region. As a result, device destructionin the termination region is prevented.

In the semiconductor device 110, the position of the n⁻-typesemiconductor region 40 as viewed in the Z-direction is substantiallyequal to the position of the p⁺-type semiconductor region 50 as viewedin the Z-direction. For instance, the width W4 in the X-direction of then⁻-type semiconductor region 40 is substantially equal to the width W1in the X-direction of the p⁺-type semiconductor region 50. Furthermore,the position of the end of the n⁻-type semiconductor region 40 as viewedin the Z-direction is substantially equal to the position of the end ofthe p⁺-type semiconductor region 50 as viewed in the Z-direction. Thisenables the n⁻-type semiconductor region 40 to cause breakdownefficiently. Furthermore, in the area for reducing breakdown, thep⁺-type semiconductor region 50 can be maximally used, and the size ofthe anode electrode 81 is maximized. Thus, the forward current can beefficiently passed.

In the case where the position of the n⁻-type semiconductor region 40 asviewed in the Z-direction is made substantially equal to the position ofthe p⁺-type semiconductor region 50 as viewed in the Z-direction, then⁻-type semiconductor region 40 and the p⁺-type semiconductor region 50are formed by the same mask in the manufacturing method described below.

Next, a method for manufacturing the semiconductor device 110 isdescribed.

FIGS. 5A to 6C are schematic sectional views illustrating the method formanufacturing the semiconductor device. First, as shown in FIG. 5A, onthe first surface 10 a of a substrate 10, an n⁻-type semiconductorregion 11 is formed. The substrate 10 is e.g. a SiC bulk substrate. Thesubstrate 10 is doped with an n-type impurity (e.g., nitrogen (N)). Theimpurity concentration of the substrate 10 is e.g. approximately 1×10¹⁸cm⁻³ or more and 5×10¹⁸ cm⁻³ or less.

The n⁻-type semiconductor region 11 is formed by epitaxial growth on thefirst surface 10 a of the substrate 10. The n⁻-type semiconductor region11 includes e.g. SiC. The n⁻-type semiconductor region 11 contains ann-type impurity (e.g., N). The impurity concentration of the n⁻-typesemiconductor region 11 is e.g. approximately 5×10¹⁴ cm⁻³ or more and5×10¹⁶ cm⁻³ or less. The impurity concentration of the n⁻-typesemiconductor region 11 is lower than the impurity concentration of thesubstrate 10.

Next, as shown in FIG. 5B, on the n⁻-type semiconductor region 11, amask M1 is formed, and an opening h1 is provided therein. The positionof the opening h1 is located above the position for forming a p⁻-typesemiconductor region 60. Then, through the opening h1 of the mask M1,ions of p-type impurity such as A1 are implanted.

Thus, an ion implantation region 60P based on the p-type impurity isformed in the n⁻-type semiconductor region 11 below the opening h1.Then, the mask M1 is removed.

Next, as shown in FIG. 5C, on the n⁻-type semiconductor region 11, amask M2 is formed, and openings h21 and h22 are provided therein. Theposition of the opening h21 is located above the position for forming afirst p-type semiconductor region 20. The position of the opening h22 islocated above the position for forming a second p-type semiconductorregion 30. Then, through the openings h21 and h22 of the mask M2, ionsof p-type impurity such as A1 are implanted.

Thus, an ion implantation region 20P based on the p-type impurity isformed in the n⁻-type semiconductor region 11 below the opening h21.Furthermore, an ion implantation region 30P based on the p-type impurityis formed in the n⁻-type semiconductor region 11 below the opening h22.Then, the mask M2 is removed.

Next, as shown in FIG. 6A, on the n⁻-type semiconductor region 11, amask M3 is formed, and an opening h3 is provided therein. The positionof the opening h3 is located above the position for forming an n⁻-typesemiconductor region 40. Then, through the opening h13 of the mask M3,ions of n-type impurity such as N are implanted.

Thus, an ion implantation region 40N based on the n-type impurity isformed on the lower side of the ion implantation region 30P below theopening h3.

Next, as shown in FIG. 6B, by using the mask M3 used in the previous ionimplantation, ions of p-type impurity such as Al are implanted. Thus, anion implantation region 50P based on the p-type impurity is formed onthe surface side of the ion implantation region 30P below the openingh3. Then, the mask M3 is removed.

Next, thermal diffusion is performed. Thus, ions of the ion implantationregions 20P, 30P, 40N, 50P, and 60P are activated. Accordingly, a firstp-type semiconductor region 20, a second p-type semiconductor region 30,an n⁻-type semiconductor region 40, a p⁺-type semiconductor region 50,and a p⁻-type semiconductor region 60 are formed.

Next, as shown in FIG. 6C, an anode electrode 81 and a cathode electrode82 are formed. The anode electrode 81 is formed on the n⁻-typesemiconductor region 11, the first p-type semiconductor region 20, thesecond p-type semiconductor region 30, and the p⁺-type semiconductorregion 50. Here, the anode electrode 81 may be formed after forming anohmic electrode 81 a on the p⁺-type semiconductor region 50. The anodeelectrode 81 is made of e.g. Ni.

The cathode electrode 82 is formed in contact with the second surface 10b of the substrate 10. The cathode electrode 82 is made of e.g. Ti.Thus, the semiconductor device 110 is completed.

Second Embodiment

Next, a second embodiment is described.

FIG. 7 is a schematic sectional view illustrating the configuration of asemiconductor device according to the second embodiment.

FIG. 7 shows the semiconductor device 121 according to the secondembodiment.

In the semiconductor device 121 shown in FIG. 7, the size of the n⁻-typesemiconductor region 40 is different from the size of the n⁻-typesemiconductor region 40 of the semiconductor device 110 according to thefirst embodiment. The rest of the configuration is similar to that ofthe semiconductor device 110 according to the first embodiment.

Third Embodiment

Next, a third embodiment is described.

FIGS. 8A to 10 are schematic plan views illustrating the configurationof semiconductor devices according to the third embodiment.

FIG. 8A shows a semiconductor device 131 according to a first example ofthe third embodiment. FIG. 8B shows a semiconductor device 132 accordingto a second example of the third embodiment. FIG. 9A shows asemiconductor device 133 according to a third example of the thirdembodiment. FIG. 9B shows a semiconductor device 134 according to afourth example of the third embodiment. FIG. 10 shows a semiconductordevice 135 according to a fifth example of the third embodiment.

As shown in FIG. 8A, the n⁻-type semiconductor region 11 of thesemiconductor device 131 includes a first region R1, a second region R2,and a third region R3. In the semiconductor device 131, the first regionR1 includes first region portions R1A and RIB. The first p-typesemiconductor region 20 is provided between the first region R1 and theanode electrode 81. That is, a JBS diode is constituted on the firstregion R1.

The second p-type semiconductor region 30 is provided between the secondregion R2 and the anode electrode 81, and between the third region R3and the anode electrode 81. The n⁻-type semiconductor region 40 is notprovided between the second region R2 and the anode electrode 81. Thatis, a P-N diode not including the n⁻-type semiconductor region 40 isconstituted on the second region R2.

The n⁻-type semiconductor region 40 is provided between the third regionR3 and the anode electrode 81. That is, a P-N diode including then⁻-type semiconductor region 40 is constituted on the third region R3.

In the semiconductor device 131, as viewed in the Z-direction, the thirdregion R3 is provided so as to surround the first region R1. The firstregion R1 is provided on both sides of the second region R2. On one sideof the second region R2, the first region portion R1A is provided. Onthe other side, the first region portion R1B is provided.

As shown in FIG. 8B, the n⁻-type semiconductor region 11 of thesemiconductor device 132 includes a first region R1, a second region R2,and a third region R3. In the semiconductor device 132, the first regionR1 includes first region portions R1A, R1B, and R1C. In thesemiconductor device 132, the second region R2 includes second regionportions R2A and R2B.

Like the semiconductor device 131, a JBS diode is constituted on thefirst region R1. A P-N diode not including the n⁻-type semiconductorregion 40 is constituted on the second region R2. A P-N diode includingthe n⁻-type semiconductor region 40 is constituted on the third regionR3.

In the semiconductor device 132, as viewed in the Z-direction, thesecond region portion R2A is provided so as to surround the first regionR1. The third region R3 and the second region portion R2B each extend ine.g. the X-direction. The second region portion R2B is provided parallelto the third region R3 at a prescribed spacing. The third region R3 isprovided between the first region portion R1A and the first regionportion R1B. The second region portion R2B is provided between the firstregion portion R1B and the first region portion R1C.

In the semiconductor devices 131 and 132 as described above, in the casewhere a low voltage (e.g., less than 3 V) is applied, the SBD based onthe JBS diode constituted on the first region R1 is operated. In thecase where a high voltage (e.g., 3 V or more) is applied, the P-N diodebased on the JBS diode constituted on the first region R1, and the P-Ndiodes constituted on the second region R2 and the third region R3 areoperated. The operation of the SBD realizes low on-voltage. Theoperation of the P-N diode realizes lower on-resistance (largercurrent).

Here, by providing the n⁻-type semiconductor region 40 formed on thethird region R3, breakdown is more likely to occur in the portion of then⁻-type semiconductor region 40 when the reverse voltage is applied. Asa result, device destruction in the termination region is suppressed.That is, the anti-surge voltage is increased.

On the other hand, in the n⁻-type semiconductor region 40 having ahigher n-type impurity concentration than the n⁻-type semiconductorregion 11, the lifetime of minority carriers is shorter. Thus, theforward current is made lower than in the case of not providing then⁻-type semiconductor region 40. That is, the anti-surge current isdecreased.

Thus, in the semiconductor devices 131 and 132, a P-N diode notincluding the n⁻-type semiconductor region 40 is provided on the secondregion R2, and a P-N diode including the n⁻-type semiconductor region 40is provided on the third region R3. In the semiconductor devices 131 and132, the anti-surge voltage is increased by providing the P-N diodeincluding the n⁻-type semiconductor region 40, and the anti-surgecurrent is increased by providing the P-N diode not including then⁻-type semiconductor region 40. The compatibility between theanti-surge voltage and the anti-surge current is achieved by the sizeand layout of the P-N diode including the n⁻-type semiconductor region40 and the P-N diode not including the n⁻-type semiconductor region 40.

As shown in FIG. 9A, the n⁻-type semiconductor region 11 of thesemiconductor device 133 includes a first region R1, a second region R2,and a third region R3. In the semiconductor device 133, the first regionR1 includes first region portions R1A, R1B, and R1C. In thesemiconductor device 133, the second region R2 includes second regionportions R2A and R2B.

In the semiconductor device 133, as viewed in the Z-direction, the thirdregion R3 is provided so as to surround the first region R1. The secondregion portions R2A and R2B each extend in e.g. the X-direction. Thesecond region portion R2A is provided parallel to the second regionportion R2B at a prescribed spacing.

Like the semiconductor devices 131 and 132, a JBS diode is constitutedon the first region R1. A P-N diode not including the n⁻-typesemiconductor region 40 is constituted on the second region R2. A P-Ndiode including the n⁻-type semiconductor region 40 is constituted onthe third region R3.

In the semiconductor device 133 as described above, the P-N diodeincluding the n⁻-type semiconductor region 40 is provided on the thirdregion R3. Thus, the electric intensity under reverse bias applicationis stronger than in the termination part. By providing the third regionR3 near the termination part, breakdown stably occurs at a lower voltagethan in the termination part even during operation in dynamiccharacteristics. This suppresses device destruction.

On the other hand, the P-N diode not including the n⁻-type semiconductorregion 40 is provided on the second region R2. This prolongs theminority carrier lifetime and increases the forward current.

With the increase of the area of the second region R2, the forwardcurrent increases. On the other hand, with the increase of the area ofthe second region R2, the first region R1 for providing the JBS diode ismade smaller, and hence the steady forward current decreases. Thus, theoptimal area of the second region R2 depends on the standards of thesteady forward current value and the forward surge current value.Typically, the optimal area of the second region R2 is preferably set toa value of approximately 5 percent (%) or more and 15% or less of thearea of the first region R1.

Furthermore, by dispersing the second region R2 at a plurality of sites,heat generation at the time of flow of the forward surge current isdispersed throughout the chip. This suppresses thermal destruction bythe surge current and improves the surge withstand capability.

As shown in FIG. 9B, the n⁻-type semiconductor region 11 of thesemiconductor device 134 includes a first region R1, a second region R2,and a third region R3. In the semiconductor device 134, the secondregion R2 includes a plurality of second region portions R2C. Theplurality of second region portions R2C are arranged inside the firstregion R1. In the example shown in FIG. 9B, the plurality of secondregion portions R2C are arranged at a prescribed spacing in each of theX-direction and the Y-direction. As viewed in the Z-direction, the thirdregion R3 is provided so as to surround the first region R1.

Like the semiconductor devices 131, 132, and 133, a JBS diode isconstituted on the first region R1. A P-N diode not including then⁻-type semiconductor region 40 is constituted on the second region R2.A P-N diode including the n⁻-type semiconductor region 40 is constitutedon the third region R3.

In the semiconductor device 134 as described above, the size of the P-Ndiode provided on the plurality of second region portions R2C isapproximately five times or more the thickness of the n⁻-typesemiconductor region 11. Thus, a plurality of second region portions R2Care provided on the entire surface of the chip, and P-N diodes areprovided on the second region portions R2C. This further improves theforward surge withstand capability.

As shown in FIG. 10, the n⁻-type semiconductor region 11 of thesemiconductor device 135 includes a first region R1, a second region R2,and a third region R3. In the semiconductor device 135, the secondregion includes a plurality of second region portions R2C and aplurality of second region portions R2D. The rest of the configurationof the semiconductor device 135 is similar to that of the semiconductordevice 134.

The plurality of second region portions R2D are provided at positionscorresponding to the corners of the third region R3. In the exampleshown in FIG. 10, the second region portions R2D are respectivelyprovided at positions corresponding to the four corners of the thirdregion R3.

In the semiconductor device 135, at the time of breakdown due toapplication of reverse surge voltage, the current concentrates at theposition corresponding to the corner of the third region R3. Thus,device destruction is likely to occur. However, in the semiconductordevice 135, the second region portions R2D are provided at positionscorresponding to the corners of the third region R3. This increases thebreakdown voltage at these corners. Thus, at the time of reverse surgevoltage application, no current flows at the corners. This suppressesdevice destruction at the corners.

As described above, the semiconductor device according to theembodiments can improve the withstand capability for surge voltage andthe like.

For instance, in the description of the above embodiments andvariations, the first conductivity type is n-type, and the secondconductivity type is p-type. However, the invention is also practicablewhen the first conductivity type is p-type and the second conductivitytype is n-type. Furthermore, in the above examples, each semiconductorregion includes SiC. However, the invention is also applicable tosemiconductors other than SiC (e.g., Si, GaN).

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A semiconductor device comprising: a firstsemiconductor region of a first conductivity type; a first electrodeprovided on the first semiconductor region, the first electrode being incontact with the first semiconductor region; a second semiconductorregion of a second conductivity type provided between the firstsemiconductor region and the first electrode; a third semiconductorregion of the second conductivity type provided between the firstsemiconductor region and the first electrode; a fourth semiconductorregion of the first conductivity type provided between the firstsemiconductor region and the third semiconductor region, the fourthsemiconductor region having a higher impurity concentration than thefirst semiconductor region; a fifth semiconductor region of the secondconductivity type provided on the third semiconductor region, the fifthsemiconductor region having a first face and a second face on anopposite side of the first face, the first face being in contact withthe third semiconductor region, the second face being in contact withthe first electrode, the fifth semiconductor region having a higherimpurity concentration than the third semiconductor region; and a secondelectrode provided on opposite side of the first semiconductor regionfrom the first electrode.
 2. The device according to claim 1, wherein aposition of the fourth semiconductor region as viewed in a directionfrom the first electrode toward the first semiconductor region issubstantially equal to a position of the fifth semiconductor region asviewed in the direction.
 3. The device according to claim 1, furthercomprising: a sixth semiconductor region of the second conductivity typeprovided so as to surround an end of the third semiconductor region, thesixth semiconductor region having a lower impurity concentration thanthe third semiconductor region.
 4. The device according to claim 1,wherein as viewed in a direction from the first electrode toward thefirst semiconductor region, an outer peripheral edge of the firstelectrode is provided between an end of the fifth semiconductor regionand an end of the third semiconductor region.
 5. The device according toclaim 1, wherein as viewed in a direction from the first electrodetoward the first semiconductor region, the first semiconductor regionincludes a first region, a second region, and a third region, the secondsemiconductor region is provided between the first region and the firstelectrode, the third semiconductor region is provided between the secondregion and the first electrode and between the third region and thefirst electrode, and the fourth semiconductor region is provided betweenthe third region and the first electrode, and not provided between thesecond region and the first electrode.
 6. The device according to claim1, wherein the first semiconductor region, the second semiconductorregion, the third semiconductor region, the fourth semiconductor region,and the fifth semiconductor region include SiC.
 7. The device accordingto claim 1, wherein the second semiconductor region is provided in aplurality, and the plurality of second semiconductor regions areprovided so as to extend in one direction, and provided parallel to eachother.
 8. The device according to claim 7, wherein the thirdsemiconductor region is provided so as to surround the plurality ofsecond semiconductor regions.
 9. The device according to claim 7,wherein the fourth semiconductor region is provided so as to surroundthe plurality of second semiconductor regions.
 10. The device accordingto claim 1, wherein the fifth semiconductor region is provided insidethe third semiconductor region.
 11. The device according to claim 5,wherein as viewed in the direction, the first region includes a firstportion and a second portion, and as viewed in the direction, the secondregion is provided between the first portion and the second portion. 12.The device according to claim 11, wherein the third region is providedso as to surround the first region.
 13. The device according to claim 5,wherein as viewed in the direction, the first region includes a firstportion, a second portion, and a third portion, as viewed in thedirection, the second region is provided between the second portion andthe third portion, and as viewed in the direction, the third region isprovided between the first portion and the second portion.
 14. Thedevice according to claim 5, wherein as viewed in the direction, thefirst region includes a first portion, a second portion, and a thirdportion, as viewed in the direction, the second region includes a fourthportion and a fifth portion, as viewed in the direction, the thirdregion is provided between the first portion and the second portion, asviewed in the direction, the fifth portion is provided between thesecond portion and the third portion, and as viewed in the direction,the fourth portion is provided so as to surround the first region. 15.The device according to claim 5, wherein as viewed in the direction, thefirst region includes a first portion, a second portion, and a thirdportion, as viewed in the direction, the second region includes a fourthportion and a fifth portion, as viewed in the direction, the fourthportion is provided between the first portion and the second portion,and as viewed in the direction, the fifth portion is provided betweenthe second portion and the third portion.
 16. The device according toclaim 15, wherein as viewed in the direction, the third region isprovided so as to surround the first region.
 17. The device according toclaim 5, wherein the second region includes a plurality of fourthportions, and the plurality of fourth portions are arranged inside thefirst region.
 18. The device according to claim 17, wherein as viewed inthe direction, the third region is provided so as to surround the firstregion.
 19. The device according to claim 5, wherein the second regionincludes a plurality of fourth portions, the third region is provided soas to surround the first region, and the plurality of fourth portionsare provided at a position corresponding to a corner of the thirdregion.